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SK Hynix HMT451S6BFR8A-PB 4GB
Kingston KHX2400C15D4/8G 8GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Kingston KHX2400C15D4/8G 8GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Kingston KHX2400C15D4/8G 8GB

Kingston KHX2400C15D4/8G 8GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
Kingston KHX2400C15D4/8G 8GB 需要考虑的原因
Kingston KHX2400C15D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 44
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston KHX2400C15D4/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 32
  • 读取速度，GB/s
    12.3 left arrow 16.7
  • 写入速度，GB/s
    7.8 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 2979

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Kingston KHX2400C15D4/8G 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kingston 9965596-002.B00G 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
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内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
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内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
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内存RAM
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Patriot Memory (PDP Systems) 2666 C18 Series 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
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Crucial Technology CT51264BA1339.C16F 4GB
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Corsair CM4B8G1J2400A16K2-O 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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Apacer Technology 78.B1GET.AU00C 4GB
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内存RAM
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
内存RAM