RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
比较
SK Hynix HMT451S6BFR8A-PB 4GB vs Micron Technology 8ATF1G64HZ-2G3H1 8GB
总分
SK Hynix HMT451S6BFR8A-PB 4GB
总分
Micron Technology 8ATF1G64HZ-2G3H1 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3H1 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
44
左右 -19% 更低的延时
更快的读取速度,GB/s
13.5
12.3
测试中的平均数值
更快的写入速度,GB/s
10.5
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
37
读取速度,GB/s
12.3
13.5
写入速度,GB/s
7.8
10.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1977
2389
SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M393A4K40CB2-CTD 32GB
Kingston 9905403-174.A00LF 2GB
Kingston MSI24D4U7S8MH-8 8GB
AMD R5S38G1601U2S 8GB
Essencore Limited KD48GS88C-32N2200 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SpecTek Incorporated 16G2666CL19 16GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905711-002.A00G 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-4000C18-8GTZ 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3600C19-16GSXKB 16GB
Kingston KHX1600C9D3/8G 8GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
报告一个错误
×
Bug description
Source link