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SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-3200C16-8GVGB 8GB

SK Hynix HMT451U7BFR8C-RD 4GB vs G Skill Intl F4-3200C16-8GVGB 8GB

总分
star star star star star
SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

总分
star star star star star
G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

差异 规格 评论

差异

SK Hynix HMT451U7BFR8C-RD 4GB 需要考虑的原因
SK Hynix HMT451U7BFR8C-RD 4GB
报告一个错误
G Skill Intl F4-3200C16-8GVGB 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GVGB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 28
  • 读取速度，GB/s
    12.8 left arrow 18.9
  • 写入速度，GB/s
    9.0 left arrow 14.6
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 3504

SK Hynix HMT451U7BFR8C-RD 4GB RAM的比较

Kingston 99U5471-056.A00LF 8GB
SK Hynix HMT351U6CFR8C-H9 4GB

G Skill Intl F4-3200C16-8GVGB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK8GX4M2A2400C16 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-2400C15-16GIS 16GB
G Skill Intl F4-2400C15-16GIS 16GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSB-16G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Corsair CMK16GX4M4B3200C15 4GB
Corsair CMK16GX4M4B3200C15 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
SpecTek Incorporated 16G 2666 CL 19 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM