SK Hynix HYMP112U64CP8-S5 1GB vs Corsair CM4X4GF3000C15K4 4GB

总分

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分

Corsair CM4X4GF3000C15K4 4GB

Corsair CM4X4GF3000C15K4 4GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB

报告一个错误

更快的读取速度，GB/s

2 18

测试中的平均数值
更快的写入速度，GB/s

2,978.2 12.7

测试中的平均数值

Corsair CM4X4GF3000C15K4 4GB

需要考虑的原因
Corsair CM4X4GF3000C15K4 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 66

左右 -200% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CM4X4GF3000C15K4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 22
读取速度，GB/s

2,929.1 18.0
写入速度，GB/s

2,978.2 12.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

511 2978

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663RZ3-CF7 2GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

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Crucial Technology CT4G4DFS8266.M8FE 4GB

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Kingston 9905469-143.A00LF 4GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CMU32GX4M4C3000C15 8GB

Corsair CMU32GX4M4C3000C15 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Kllisre 0000 8GB

Kllisre 0000 8GB