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SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A1K1KCB1-CRC 8GB

SK Hynix HYMP112U64CP8-S5 1GB vs Samsung M471A1K1KCB1-CRC 8GB

总分
star star star star star
SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

总分
star star star star star
Samsung M471A1K1KCB1-CRC 8GB

Samsung M471A1K1KCB1-CRC 8GB

差异 规格 评论

差异

SK Hynix HYMP112U64CP8-S5 1GB 需要考虑的原因
SK Hynix HYMP112U64CP8-S5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.3
    测试中的平均数值
Samsung M471A1K1KCB1-CRC 8GB 需要考虑的原因
Samsung M471A1K1KCB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 66
    左右 -187% 更低的延时
  • 更快的写入速度，GB/s
    7.0 left arrow 2,978.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A1K1KCB1-CRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 23
  • 读取速度，GB/s
    2,929.1 left arrow 14.3
  • 写入速度，GB/s
    2,978.2 left arrow 7.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    511 left arrow 2103

SK Hynix HYMP112U64CP8-S5 1GB RAM的比较

OCZ OCZ2SOE800URB1G 1GB
Kingston 9905295-025.B00LF 1GB

Samsung M471A1K1KCB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CM4X4GF2666C16K4 4GB
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内存RAM
Kingston HP32D4S2S1ME-4 4GB
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G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston KF3600C18D4/32GX 32GB
Kingston KF3600C18D4/32GX 32GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Corsair MK16GX4M2B3200C16 8GB
Corsair MK16GX4M2B3200C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A1K1KCB1-CRC 8GB
Samsung M471A1K1KCB1-CRC 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMA84GL7AMR4N-TF 32GB
SK Hynix HMA84GL7AMR4N-TF 32GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M471A1G43EB1-CPB 8GB
Samsung M471A1G43EB1-CPB 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905700-024.A00G 8GB
Kingston 9905700-024.A00G 8GB
内存RAM