SK Hynix HYMP112U64CP8-S6 1GB vs G Skill Intl F4-4000C19-8GTZSW 8GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

G Skill Intl F4-4000C19-8GTZSW 8GB

G Skill Intl F4-4000C19-8GTZSW 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 19.4

测试中的平均数值
更快的写入速度，GB/s

2,076.1 15.5

测试中的平均数值

G Skill Intl F4-4000C19-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4000C19-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 59

左右 -127% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-4000C19-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 26
读取速度，GB/s

4,723.5 19.4
写入速度，GB/s

2,076.1 15.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

741 3515

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR128GX4M8Z2933C16 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M471A1K43BB1-CRC 8GB

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Corsair CMK16GX4M2Z2666C16 8GB

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Samsung M393B5270CH0-CH9 4GB

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V-Color Technology Inc. TN48G26S819-SB 8GB

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Kingston KHX3000C16/16GX 16GB

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