SK Hynix HYMP112U64CP8-S6 1GB vs Neo Forza GKE160SO204808-3200 16GB

总分

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

总分

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-S6 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-S6 1GB

报告一个错误

低于PassMark测试中的延时，ns

59 63

左右 6% 更低的延时
更快的读取速度，GB/s

4 14.7

测试中的平均数值
更快的写入速度，GB/s

2,076.1 12.7

测试中的平均数值

Neo Forza GKE160SO204808-3200 16GB

需要考虑的原因
Neo Forza GKE160SO204808-3200 16GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-S6 1GB

Neo Forza GKE160SO204808-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 63
读取速度，GB/s

4,723.5 14.7
写入速度，GB/s

2,076.1 12.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

741 2543

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-071.A00LF 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Kingston 9905403-447.A00LF 4GB

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Samsung M471A2K43CB1-CRCR 16GB