SK Hynix HYMP112U64CP8-Y5 1GB vs G Skill Intl F4-3866C18-8GTZSW 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 20.9

测试中的平均数值

G Skill Intl F4-3866C18-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3866C18-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 62

左右 -244% 更低的延时
更快的写入速度，GB/s

17.0 1,658.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

G Skill Intl F4-3866C18-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 18
读取速度，GB/s

4,216.7 20.9
写入速度，GB/s

1,658.4 17.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

688 3668

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.B1GET.AU00C 4GB

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Crucial Technology BLE4G4D26AFEA.8FBD 4GB

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Kingston 99U5474-013.A00LF 2GB

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Netac Technology Co Ltd E40832A 8GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Crucial Technology BLS8G4D240FSA.16FBD 8GB

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Corsair CML8GX3M2A1866C9 4GB

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Corsair CMD16GX4M2B3000C15 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

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Corsair CMX4GX3M1A1333C9 4GB

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Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

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Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2800C15-4GVRB 4GB

G Skill Intl F4-2800C15-4GVRB 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB