SK Hynix HYMP112U64CP8-Y5 1GB vs Kingston ACR26D4U9S8ME-8 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Kingston ACR26D4U9S8ME-8 8GB

Kingston ACR26D4U9S8ME-8 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值

Kingston ACR26D4U9S8ME-8 8GB

需要考虑的原因
Kingston ACR26D4U9S8ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 62

左右 -107% 更低的延时
更快的写入速度，GB/s

11.3 1,658.4

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston ACR26D4U9S8ME-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 30
读取速度，GB/s

4,216.7 16.0
写入速度，GB/s

1,658.4 11.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

688 2901

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston ACR26D4U9S8ME-8 8GB

Kingston ACR26D4U9S8ME-8 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT8G4SFD824A.C16FHP 8GB

Crucial Technology CT8G4SFD824A.C16FHP 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Corsair CM4X4GF2133C13K4 4GB

Corsair CM4X4GF2133C13K4 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB