SK Hynix HYMP125S64CP8-S6 2GB vs G Skill Intl F4-3333C16-8GTZB 8GB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分

G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

差异规格评论

差异

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 18.7

测试中的平均数值
更快的写入速度，GB/s

2,013.5 14.1

测试中的平均数值

G Skill Intl F4-3333C16-8GTZB 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZB 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 68

左右 -224% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-3333C16-8GTZB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 21
读取速度，GB/s

4,402.8 18.7
写入速度，GB/s

2,013.5 14.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

701 3380

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR32GX4M4C3466C16 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Samsung M393A2G40DB0-CPB 16GB

Samsung M393A2G40DB0-CPB 16GB

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Avant Technology W641GU42J7240NC 8GB

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