SK Hynix HYMP125S64CP8-S6 2GB vs Kingston KTD3KX-MIB 8GB

总分

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

总分

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

差异规格评论

差异

SK Hynix HYMP125S64CP8-S6 2GB

需要考虑的原因
SK Hynix HYMP125S64CP8-S6 2GB

报告一个错误

更快的读取速度，GB/s

4 13

测试中的平均数值

Kingston KTD3KX-MIB 8GB

需要考虑的原因
Kingston KTD3KX-MIB 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 68

左右 -162% 更低的延时
更快的写入速度，GB/s

6.9 2,013.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP125S64CP8-S6 2GB

Kingston KTD3KX-MIB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 26
读取速度，GB/s

4,402.8 13.0
写入速度，GB/s

2,013.5 6.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

701 1931

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

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SK Hynix HYMP125S64CP8-S6 2GB

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Kingston KTD3KX-MIB 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Corsair CMU64GX4M4C3000C15 16GB

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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-3866C18-16GTZR 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-5066C20-8GVK 8GB

G Skill Intl F4-5066C20-8GVK 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

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Samsung M393B2G70BH0-CK0 16GB

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SK Hynix GKE800SO102408-2400 8GB

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A-DATA Technology DDR2 800G 2GB

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Corsair CMV4GX4M1A2133C15 4GB