RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-4400C19-16GTZR 16GB

SK Hynix HYMP125U64CP8-S6 2GB vs G Skill Intl F4-4400C19-16GTZR 16GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 20.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 16.8
    测试中的平均数值
G Skill Intl F4-4400C19-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4400C19-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 60
    左右 -107% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-4400C19-16GTZR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 29
  • 读取速度，GB/s
    5,082.2 left arrow 20.2
  • 写入速度，GB/s
    2,381.6 left arrow 16.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    925 left arrow 3925

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

G Skill Intl F4-4400C19-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-4000C19-16GTRG 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston HP26D4S9S8MH-8 8GB
Kingston HP26D4S9S8MH-8 8GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMK32GX4M4K3600C16 8GB
Corsair CMK32GX4M4K3600C16 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-1600C11-8GIS 8GB
G Skill Intl F3-1600C11-8GIS 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Mushkin MRB4U300GJJM16G 16GB
Mushkin MRB4U300GJJM16G 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Avant Technology J642GU42J5213N4 16GB
Avant Technology J642GU42J5213N4 16GB
内存RAM
Corsair CMX32GX3M4A1600C11 8GB
Corsair CMX32GX3M4A1600C11 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 9965657-011.A00G 16GB
Kingston 9965657-011.A00G 16GB
内存RAM