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SK Hynix HYMP125U64CP8-S6 2GB
Kingston KHX4266C19D4/8GX 8GB

SK Hynix HYMP125U64CP8-S6 2GB vs Kingston KHX4266C19D4/8GX 8GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
Kingston KHX4266C19D4/8GX 8GB

Kingston KHX4266C19D4/8GX 8GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 16.8
    测试中的平均数值
Kingston KHX4266C19D4/8GX 8GB 需要考虑的原因
Kingston KHX4266C19D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 60
    左右 -122% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
Kingston KHX4266C19D4/8GX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 27
  • 读取速度，GB/s
    5,082.2 left arrow 18.6
  • 写入速度，GB/s
    2,381.6 left arrow 16.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    925 left arrow 3758

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

Kingston KHX4266C19D4/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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Corsair CMK32GX4M4B2800C14 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston KHX4266C19D4/8GX 8GB
Kingston KHX4266C19D4/8GX 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
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Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
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Corsair CM4X8GD3200C16K2E 8GB
内存RAM
Golden Empire CL5-5-5DDR2 1GB
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Kingston 99U5700-014.A00G 8GB
内存RAM
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Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
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G Skill Intl F4-2133C15-8GRS 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
内存RAM
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A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Kingston 9965589-024.D01G 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
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Chun Well Technology Holding Limited MD4U0836165BCW 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Transcend Information JM3200HLG-8G 8GB
Transcend Information JM3200HLG-8G 8GB
内存RAM