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SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-4000C18-8GTZ 8GB

SK Hynix HYMP164U64CP6-Y5 512MB vs G Skill Intl F4-4000C18-8GTZ 8GB

总分
star star star star star
SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

差异 规格 评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB 需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB
报告一个错误
  • 更快的写入速度，GB/s
    8,883.4 left arrow 16.7
    测试中的平均数值
G Skill Intl F4-4000C18-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 44
    左右 -76% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 14
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-4000C18-8GTZ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 25
  • 读取速度，GB/s
    14,740.4 left arrow 19.1
  • 写入速度，GB/s
    8,883.4 left arrow 16.7
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2811 left arrow 3845

SK Hynix HYMP164U64CP6-Y5 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP112U72CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-4000C18-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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