SK Hynix HYMP164U64CP6-Y5 512MB vs Kingston 9965643-002.A01G 4GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Kingston 9965643-002.A01G 4GB

Kingston 9965643-002.A01G 4GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 12.1

测试中的平均数值

Kingston 9965643-002.A01G 4GB

需要考虑的原因
Kingston 9965643-002.A01G 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 44

左右 -91% 更低的延时
更快的读取速度，GB/s

16.2 14

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9965643-002.A01G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 23
读取速度，GB/s

14,740.4 16.2
写入速度，GB/s

8,883.4 12.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2811 2546

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GS6DJR8N-XN 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston 9965643-002.A01G 4GB

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Kingston 9905403-437.A01LF 4GB

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Corsair CMK64GX4M2E3200C16 32GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Corsair CMG16GX4M2D3600C18 8GB

Corsair CMG16GX4M2D3600C18 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB