TwinMOS 8DHE3MN8-HATP 2GB vs G Skill Intl F4-3600C18-32GTZR 32GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.5

测试中的平均数值
更快的写入速度，GB/s

870.4 16.3

测试中的平均数值

G Skill Intl F4-3600C18-32GTZR 32GB

需要考虑的原因
G Skill Intl F4-3600C18-32GTZR 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 87

左右 -190% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3600C18-32GTZR 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 30
读取速度，GB/s

3,155.6 17.5
写入速度，GB/s

870.4 16.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 3837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMU16GX4M2A2400C16 8GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Corsair CM4X8GF2666Z16K4 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Ramaxel Technology RMUA5090KB78HAF2133 8GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

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Samsung M471A2K43BB1-CTD 16GB

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Apacer Technology 78.CAGP7.AFW0C 8GB