SK Hynix HYMP164U64CP6-Y5 512MB vs Samsung M378A4G43MB1-CTD 32GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 12.6

测试中的平均数值

Samsung M378A4G43MB1-CTD 32GB

需要考虑的原因
Samsung M378A4G43MB1-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

38 44

左右 -16% 更低的延时
更快的读取速度，GB/s

15.4 14

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M378A4G43MB1-CTD 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 38
读取速度，GB/s

14,740.4 15.4
写入速度，GB/s

8,883.4 12.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2811 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston 99U5474-010.A00LF 2GB

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Corsair CMH16GX4M2Z3600C18 8GB

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Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB

A-DATA Technology AM2P24HC8T1-BBFS 8GB

Samsung M3 78T5663RZ3-CF7 2GB

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G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB

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Kingston 9905471-002.A00LF 2GB

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Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Corsair CMR16GX4M2C3000C16 8GB

Corsair CMR16GX4M2C3000C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

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Team Group Inc. Team-Elite-1333 4GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB