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SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M386A8K40BM1-CRC 64GB

SK Hynix HYMP164U64CP6-Y5 512MB vs Samsung M386A8K40BM1-CRC 64GB

总分
star star star star star
SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分
star star star star star
Samsung M386A8K40BM1-CRC 64GB

Samsung M386A8K40BM1-CRC 64GB

差异 规格 评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB 需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8,883.4 left arrow 7.5
    测试中的平均数值
Samsung M386A8K40BM1-CRC 64GB 需要考虑的原因
Samsung M386A8K40BM1-CRC 64GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 44
    左右 -29% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M386A8K40BM1-CRC 64GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 34
  • 读取速度，GB/s
    14,740.4 left arrow 10.4
  • 写入速度，GB/s
    8,883.4 left arrow 7.5
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2811 left arrow 2297

SK Hynix HYMP164U64CP6-Y5 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP112U72CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB

Samsung M386A8K40BM1-CRC 64GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M386A8K40BM1-CRC 64GB
Samsung M386A8K40BM1-CRC 64GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
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Kingston KHX3466C16D4/16GX 16GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Nanya Technology M2S2G64CB88G5N-DI 2GB
Nanya Technology M2S2G64CB88G5N-DI 2GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M2C3200C14M 16GB
Corsair CMD32GX4M2C3200C14M 16GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
EXCELERAM EKBLACK4163016AD 8GB
EXCELERAM EKBLACK4163016AD 8GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-4GRK 4GB
G Skill Intl F4-3200C16-4GRK 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM