SK Hynix HYMP164U64CP6-Y5 512MB vs Samsung V-GeN D4S8GL30A8TX5 8GB

总分

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

总分

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

差异规格评论

差异

SK Hynix HYMP164U64CP6-Y5 512MB

需要考虑的原因
SK Hynix HYMP164U64CP6-Y5 512MB

报告一个错误

更快的写入速度，GB/s

8,883.4 11.7

测试中的平均数值

Samsung V-GeN D4S8GL30A8TX5 8GB

需要考虑的原因
Samsung V-GeN D4S8GL30A8TX5 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 44

左右 -91% 更低的延时
更快的读取速度，GB/s

16.8 14

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung V-GeN D4S8GL30A8TX5 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 23
读取速度，GB/s

14,740.4 16.8
写入速度，GB/s

8,883.4 11.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2811 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5244CB0-CVF 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9905712-010.A00G 16GB

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Samsung M393B5270CH0-CH9 4GB

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB