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SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3000C15-8GRKB 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB vs G Skill Intl F4-3000C15-8GRKB 8GB

总分
star star star star star
SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分
star star star star star
G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

差异 规格 评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB 需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,303.7 left arrow 15.0
    测试中的平均数值
G Skill Intl F4-3000C15-8GRKB 8GB 需要考虑的原因
G Skill Intl F4-3000C15-8GRKB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 117
    左右 -485% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3000C15-8GRKB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    117 left arrow 20
  • 读取速度，GB/s
    3,094.8 left arrow 18.9
  • 写入速度，GB/s
    2,303.7 left arrow 15.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    784 left arrow 3281

SK Hynix HYMP31GF72CMP4D5Y5 8GB RAM的比较

takeMS International AG TMS2GS264D081805AW 2GB
Kingston 9905315-124.A00LF 1GB

G Skill Intl F4-3000C15-8GRKB 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3000C15-8GRKB 8GB
G Skill Intl F4-3000C15-8GRKB 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Kingston 9905678-014.A00G 4GB
Kingston 9905678-014.A00G 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
SK Hynix HMA41GR7AFR4N-UH 8GB
SK Hynix HMA41GR7AFR4N-UH 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMD32GX4M4B3600C16 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CMU32GX4M2A2400C14 16GB
Corsair CMU32GX4M2A2400C14 16GB
内存RAM