SK Hynix HYMP31GF72CMP4D5Y5 8GB vs SK Hynix GKE800SO102408-2400 8GB

总分

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

总分

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

差异规格评论

差异

SK Hynix HYMP31GF72CMP4D5Y5 8GB

需要考虑的原因
SK Hynix HYMP31GF72CMP4D5Y5 8GB

报告一个错误

更快的读取速度，GB/s

3 14

测试中的平均数值

SK Hynix GKE800SO102408-2400 8GB

需要考虑的原因
SK Hynix GKE800SO102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 117

左右 -216% 更低的延时
更快的写入速度，GB/s

9.3 2,303.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

117 37
读取速度，GB/s

3,094.8 14.0
写入速度，GB/s

2,303.7 9.3
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

784 2327

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR512X64D3S13C9G 4GB

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Kingston 99U5474-037.A00LF 4GB

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Samsung M378A5143TB2-CTD 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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EVGA 16G-D3-1600-MR 8GB

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Corsair CMK64GX4M4D3000C16 16GB

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Kingston 99U5429-007.A00LF 2GB

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Micron Technology 9ASF51272PZ-2G3B1 4GB

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Kingston 9905403-090.A01LF 4GB

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Crucial Technology BLS8G4D26BFSB.16FD2 8GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMH32GX4M4D3600C18 8GB

Corsair CMH32GX4M4D3600C18 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

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Samsung M471B1G73DB0-YK0 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB