SK Hynix HYMP512S64CP8-Y5 1GB vs G Skill Intl F4-2666C15-4GVR 4GB

总分

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分

G Skill Intl F4-2666C15-4GVR 4GB

G Skill Intl F4-2666C15-4GVR 4GB

差异规格评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值

G Skill Intl F4-2666C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2666C15-4GVR 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 68

左右 -119% 更低的延时
更快的写入速度，GB/s

12.1 1,670.7

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512S64CP8-Y5 1GB

G Skill Intl F4-2666C15-4GVR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 31
读取速度，GB/s

3,554.9 16.9
写入速度，GB/s

1,670.7 12.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

513 2577

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

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Kllisre M471A3243BB0-CP50 16GB

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Corsair CMD32GX4M2A2800C16 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Crucial Technology CT16G4SFD8266.C16FJ 16GB

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Kingmax Semiconductor GSAG42F-18---------- 8GB

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Lexar Co Limited LD4AU008G-H3200GST 8GB

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Avant Technology J642GU42J2320NQ 16GB

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Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3200C16-32GTZN 32GB

G Skill Intl F4-3200C16-32GTZN 32GB

TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Kingston KHX3600C18D4/16GX 16GB

Kingston KHX3600C18D4/16GX 16GB