SK Hynix HYMP512S64CP8-Y5 1GB vs Kingston KHX4800C19D4/8GX 8GB

总分

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

总分

Kingston KHX4800C19D4/8GX 8GB

Kingston KHX4800C19D4/8GX 8GB

差异规格评论

差异

SK Hynix HYMP512S64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP512S64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

3 18.2

测试中的平均数值

Kingston KHX4800C19D4/8GX 8GB

需要考虑的原因
Kingston KHX4800C19D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 68

左右 -172% 更低的延时
更快的写入速度，GB/s

17.4 1,670.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston KHX4800C19D4/8GX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 25
读取速度，GB/s

3,554.9 18.2
写入速度，GB/s

1,670.7 17.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

513 3848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M3 78T2953EZ3-CF7 1GB

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Essencore Limited IM4AGS88N26-GIIHA0 16GB

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Maxsun MSD44G24Q3 4GB

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Crucial Technology CT102464BF160B.C16 8GB

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Crucial Technology CT4G4SFS824A.M8FB 4GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16G

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Apacer Technology 78.B1GE3.AFF0C 4GB

Apacer Technology 78.B1GE3.AFF0C 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Kingston 9965596-016.B01G 8GB

Kingston 9965596-016.B01G 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905625-076.A00G 8GB