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Golden Empire 1GB DDR2 800 CAS=4 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
比较
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
总分
Golden Empire 1GB DDR2 800 CAS=4 1GB
总分
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
低于PassMark测试中的延时,ns
49
73
左右 33% 更低的延时
更快的读取速度,GB/s
4
15.1
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
更快的写入速度,GB/s
7.9
2,066.5
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
49
73
读取速度,GB/s
4,577.1
15.1
写入速度,GB/s
2,066.5
7.9
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
737
1724
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
Samsung M393B2G70BH0-CH9 16GB
Mushkin MRA4S320GJJM16G 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS16G4S240FSD.16FBD 16GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
Samsung M378B5673FH0-CH9 2GB
Kingston XRMWRN-MIE2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA451U6MFR8N-TF 4GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F3-1600C11-8GRSL 8GB
Crucial Technology 16G4UD2400.C16BD1 16GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
报告一个错误
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Bug description
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