Smart Modular SG564568FG8N6KF-Z2 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 15.6

测试中的平均数值
更快的写入速度，GB/s

3,071.4 11.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 70

左右 -159% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 27
读取速度，GB/s

4,372.7 15.6
写入速度，GB/s

3,071.4 11.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905712-034.A00G 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston KM0VW4-MID 8GB

Kingston KM0VW4-MID 8GB

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Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

G Skill Intl F4-2400C15-4GNT 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB