Smart Modular SG564568FG8N6KF-Z2 2GB vs Mushkin 99[2/7/4]192[F/T] 4GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值

Mushkin 99[2/7/4]192[F/T] 4GB

需要考虑的原因
Mushkin 99[2/7/4]192[F/T] 4GB

报告一个错误

低于PassMark测试中的延时，ns

65 70

左右 -8% 更低的延时
更快的写入速度，GB/s

8.5 3,071.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Mushkin 99[2/7/4]192[F/T] 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 65
读取速度，GB/s

4,372.7 15.8
写入速度，GB/s

3,071.4 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 1932

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4DFS8213.C8FAD11 4GB

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Crucial Technology BLS8G4D240FSA.16FAD 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

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Kingston KVR800D2N6/2G 2GB

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Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Corsair CMZ16GX3M2A1600C10 8GB

Corsair CMZ16GX3M2A1600C10 8GB

G Skill Intl F4-3000C14-16GTZ 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB