Smart Modular SG564568FG8N6KF-Z2 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

Smart Modular SG564568FG8N6KF-Z2 2GB

需要考虑的原因
Smart Modular SG564568FG8N6KF-Z2 2GB

报告一个错误

低于PassMark测试中的延时，ns

70 73

左右 4% 更低的延时
更快的读取速度，GB/s

4 15.1

测试中的平均数值

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

更快的写入速度，GB/s

7.9 3,071.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Smart Modular SG564568FG8N6KF-Z2 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

70 73
读取速度，GB/s

4,372.7 15.1
写入速度，GB/s

3,071.4 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hewlett-Packard 7EH68AA# 16GB

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Crucial Technology CT102464BF160B-16F 8GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Corsair CMT32GX4M4C3200C14 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CM4X16GE2666C18S2 16GB

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Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

G Skill Intl F4-2666C18-8GFT 8GB

G Skill Intl F4-2666C18-8GFT 8GB