Smart Modular SH564128FH8NZQNSCG 4GB vs Corsair CM4B16G1J2400A16K2-O 16GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

Corsair CM4B16G1J2400A16K2-O 16GB

Corsair CM4B16G1J2400A16K2-O 16GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Corsair CM4B16G1J2400A16K2-O 16GB

需要考虑的原因
Corsair CM4B16G1J2400A16K2-O 16GB

报告一个错误

更快的读取速度，GB/s

17.6 9.4

测试中的平均数值
更快的写入速度，GB/s

12.9 5.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CM4B16G1J2400A16K2-O 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

9.4 17.6
写入速度，GB/s

5.5 12.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1453 3189

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMR32GX4M4A2666C16 8GB

Corsair CMR32GX4M4A2666C16 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston ACR26D4U9S1KA-4 4GB

Kingston ACR26D4U9S1KA-4 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C16-8GFXR 8GB

G Skill Intl F4-2400C16-8GFXR 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

V-Color Technology Inc. TL48G32S8KGRGB16 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMK4GX4M1D2400C14 4GB

Corsair CMK4GX4M1D2400C14 4GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

Essencore Limited IM48GU48A32-GIISMZ 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB