Smart Modular SH564128FH8NZQNSCG 4GB vs Crucial Technology CT8G4DFRA266.C8FB 8GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

Crucial Technology CT8G4DFRA266.C8FB 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Crucial Technology CT8G4DFRA266.C8FB 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FB 8GB

报告一个错误

更快的读取速度，GB/s

16.5 9.4

测试中的平均数值
更快的写入速度，GB/s

12.0 5.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

9.4 16.5
写入速度，GB/s

5.5 12.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1453 3013

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMK16GX4M2B4266C19 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CB4GU2400.M8E 4GB

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Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

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G Skill Intl F4-4000C19-8GTZ 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M393B2G70BH0-CH9 16GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB