STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3300C16-16GTZSW 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 13.7

测试中的平均数值

G Skill Intl F4-3300C16-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3300C16-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 63

左右 -117% 更低的延时
更快的写入速度，GB/s

11.3 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3300C16-16GTZSW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 29
读取速度，GB/s

3,231.0 13.7
写入速度，GB/s

1,447.3 11.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264AZ-3G2E1 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Kingston 9905743-034.A00G 8GB

Kingston 9905743-034.A00G 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB