Smart Modular SH564128FH8NZQNSCG 4GB vs Micron Technology 8G2666CL19 8GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Micron Technology 8G2666CL19 8GB

需要考虑的原因
Micron Technology 8G2666CL19 8GB

报告一个错误

更快的读取速度，GB/s

16.5 9.4

测试中的平均数值
更快的写入速度，GB/s

13.3 5.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

Micron Technology 8G2666CL19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

9.4 16.5
写入速度，GB/s

5.5 13.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1453 3040

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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A-DATA Technology VDQVE1B16 2GB

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Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

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Crucial Technology CT32G4SFD832A.M16FB 32GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

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G Skill Intl F4-2400C15-16GFX 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3600C14-8GTZNB 8GB

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Samsung M471B5273EB0-CK0 4GB

Avant Technology J642GU42J9266NF 16GB

Avant Technology J642GU42J9266NF 16GB