PNY Electronics PNY 2GB vs Samsung M393A5143DB0-CPB 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 54

左右 50% 更低的延时
更快的读取速度，GB/s

13.8 10.4

测试中的平均数值

Samsung M393A5143DB0-CPB 4GB

需要考虑的原因
Samsung M393A5143DB0-CPB 4GB

报告一个错误

更快的写入速度，GB/s

8.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Samsung M393A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 54
读取速度，GB/s

13.8 10.4
写入速度，GB/s

8.4 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2226

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5701-036.A00G 16GB

Kingston 99U5701-036.A00G 16GB

Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CB8GU2400.C8ET 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Tanbassh 8G 2666MHZ 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Corsair VSA2GSDS667C4 2GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston 9905598-009.A00G 8GB

Kingston 9905598-009.A00G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Jinyu CL16-16-16 D4-2400 8GB

Jinyu CL16-16-16 D4-2400 8GB