Smart Modular SH564128FH8NZQNSCG 4GB vs SK Hynix HMA425S6BJR6N-UH 2GB

总分

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

总分

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

差异规格评论

差异

Smart Modular SH564128FH8NZQNSCG 4GB

需要考虑的原因
Smart Modular SH564128FH8NZQNSCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 101

左右 72% 更低的延时

SK Hynix HMA425S6BJR6N-UH 2GB

需要考虑的原因
SK Hynix HMA425S6BJR6N-UH 2GB

报告一个错误

更快的读取速度，GB/s

14.2 9.4

测试中的平均数值
更快的写入速度，GB/s

7.0 5.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Smart Modular SH564128FH8NZQNSCG 4GB

SK Hynix HMA425S6BJR6N-UH 2GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 101
读取速度，GB/s

9.4 14.2
写入速度，GB/s

5.5 7.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1453 1313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT451S6BFR8A-PB 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Kingston KCDT82-MIE 4GB

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Crucial Technology CT102464BA160B.M16 8GB

Corsair CMD32GX4M4B3000C15 8GB

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Kingston 9905624-004.A00G 4GB

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Samsung M471B1G73DB0-YK0 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB