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SpecTek Incorporated ?????????????????? 2GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB

SpecTek Incorporated ?????????????????? 2GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB

总分
star star star star star
SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

总分
star star star star star
Micron Technology 8ATF2G64AZ-3G2E1 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

差异 规格 评论

差异

SpecTek Incorporated ?????????????????? 2GB 需要考虑的原因
SpecTek Incorporated ?????????????????? 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.9
    测试中的平均数值
Micron Technology 8ATF2G64AZ-3G2E1 16GB 需要考虑的原因
Micron Technology 8ATF2G64AZ-3G2E1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 54
    左右 -64% 更低的延时
  • 更快的写入速度，GB/s
    10.4 left arrow 1,781.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 33
  • 读取速度，GB/s
    4,269.3 left arrow 16.9
  • 写入速度，GB/s
    1,781.8 left arrow 10.4
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    618 left arrow 3035

SpecTek Incorporated ?????????????????? 2GB RAM的比较

Samsung M3 78T6553BZ0-KCC 512MB
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Mushkin 99[2/7/4]204[F/T] 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CMR32GX4M2D3000C16 16GB
Corsair CMR32GX4M2D3000C16 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9965589-008.D02G 8GB
Kingston 9965589-008.D02G 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD16GX4M2B3466C16 8GB
Corsair CMD16GX4M2B3466C16 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Corsair CMW128GX4M4D3000C16 32GB
Corsair CMW128GX4M4D3000C16 32GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Mushkin MES4S213FF16G28 16GB
Mushkin MES4S213FF16G28 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 99U5702-101.A00G 8GB
Kingston 99U5702-101.A00G 8GB
内存RAM