Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Panram International Corporation M424016 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Panram International Corporation M424016 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 31

左右 23% 更低的延时
更快的读取速度，GB/s

16 12.6

测试中的平均数值
更快的写入速度，GB/s

12.5 9.9

测试中的平均数值

Panram International Corporation M424016 4GB

需要考虑的原因
Panram International Corporation M424016 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Panram International Corporation M424016 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 31
读取速度，GB/s

16.0 12.6
写入速度，GB/s

12.5 9.9
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 2035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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