RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology BLS16G4D240FSE.16FBR 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Crucial Technology BLS16G4D240FSE.16FBR 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
13.2
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FBR 16GB
报告一个错误
低于PassMark测试中的延时,ns
45
63
左右 -40% 更低的延时
更快的写入速度,GB/s
12.2
1,447.3
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
45
读取速度,GB/s
3,231.0
13.2
写入速度,GB/s
1,447.3
12.2
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
478
2841
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-3200C16-8GVKBN 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMA82GU6AFR8N-TF 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
Samsung M393B1G70BH0-YK0 8GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Kingston 9905471-002.A00LF 2GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
A-DATA Technology DQVE1B16 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A
SK Hynix HMT451S6AFR8A-PB 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4266C19-8GTZA 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误
×
Bug description
Source link