STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Crucial Technology CT16G4DFS8266.C8FB 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

Crucial Technology CT16G4DFS8266.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4DFS8266.C8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 63

左右 -125% 更低的延时
更快的写入速度，GB/s

12.6 1,447.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 28
读取速度，GB/s

3,231.0 16.1
写入速度，GB/s

1,447.3 12.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

478 3344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Kingston ACR26D4S9S1ME-4 4GB

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Corsair CMSX64GX4M2A3200C22 32GB

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Avant Technology J644GU44J1293NF 32GB

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Transcend Information TS512MSK64W6H 4GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Crucial Technology CT8G4DFS8266.M8FJ 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB