RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3000C14-16GTZR 16GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-3000C14-16GTZR 16GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
G Skill Intl F4-3000C14-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
14.9
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3000C14-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
39
63
左右 -62% 更低的延时
更快的写入速度,GB/s
15.0
1,447.3
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3000C14-16GTZR 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
39
读取速度,GB/s
3,231.0
14.9
写入速度,GB/s
1,447.3
15.0
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
478
3233
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
G Skill Intl F4-3000C14-16GTZR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3000C14-16GTZR 16GB
Kingston 9905471-001.A01LF 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-4000C18-16GTZR 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-3200C16-16GVKA 16GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK16GX4M2K4266C19 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3200C15-8GTZ 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
G Skill Intl F4-2133C15-16GFX 16GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M471A2K43BB1-CTD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
Kingston HP698651-154-MCN 8GB
Kingston 9905701-004.A00G 16GB
Corsair CMV4GX3M1B1600C11 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
报告一个错误
×
Bug description
Source link