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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905624-008.A00G 8GB
比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston 9905624-008.A00G 8GB
总分
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
总分
Kingston 9905624-008.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
更快的读取速度,GB/s
3
14.2
测试中的平均数值
需要考虑的原因
Kingston 9905624-008.A00G 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
63
左右 -133% 更低的延时
更快的写入速度,GB/s
10.1
1,447.3
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905624-008.A00G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
63
27
读取速度,GB/s
3,231.0
14.2
写入速度,GB/s
1,447.3
10.1
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
478
2416
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Kingston 9905624-008.A00G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
A-DATA Technology AD73I1B1672EG 2GB
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Kingston KF552C40-16 16GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Kingston 99U5428-063.A00LF 8GB
Kingston KF2666C16D4/16G 16GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA82GU6MFR8N-TF 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston HP32D4S2S1ME-8 8GB
Samsung M471A4G43BB1-CWE 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
报告一个错误
×
Bug description
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