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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HP37D4U1S8ME-8XR 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Kingston HP37D4U1S8ME-8XR 8GB

总分
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分
star star star star star
Kingston HP37D4U1S8ME-8XR 8GB

Kingston HP37D4U1S8ME-8XR 8GB

差异 规格 评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB 需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.6
    测试中的平均数值
Kingston HP37D4U1S8ME-8XR 8GB 需要考虑的原因
Kingston HP37D4U1S8ME-8XR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 63
    左右 -75% 更低的延时
  • 更快的写入速度，GB/s
    14.9 left arrow 1,447.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HP37D4U1S8ME-8XR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 36
  • 读取速度，GB/s
    3,231.0 left arrow 19.6
  • 写入速度，GB/s
    1,447.3 left arrow 14.9
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    478 left arrow 3266

STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM的比较

Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB

Kingston HP37D4U1S8ME-8XR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

SK Hynix DDR2 800 2G 2GB
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内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Asgard VMA45UH-MEC1U2AW2 16GB
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内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HP37D4U1S8ME-8XR 8GB
Kingston HP37D4U1S8ME-8XR 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
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SK Hynix GKE800SO102408-2400 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK8GX4M2C3000C16 4GB
Corsair CMK8GX4M2C3000C16 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
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Kingston 99U5428-018.A00LF 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
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Elpida EBE10UE8AFSA-8G-F 1GB
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Corsair CMT128GX4M8C3000C15 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
内存RAM