STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M393A2G40EB1-CPB 16GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

Samsung M393A2G40EB1-CPB 16GB

需要考虑的原因
Samsung M393A2G40EB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

56 63

左右 -13% 更低的延时
更快的读取速度，GB/s

9.3 3

测试中的平均数值
更快的写入速度，GB/s

7.7 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M393A2G40EB1-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 56
读取速度，GB/s

3,231.0 9.3
写入速度，GB/s

1,447.3 7.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Wilk Elektronik S.A. W-HK26S16G 16GB

Wilk Elektronik S.A. W-HK26S16G 16GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Apacer Technology 78.C1GS7.DFW0C 8GB

Apacer Technology 78.C1GS7.DFW0C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB