STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M471A5644EB0-CPB 2GB

总分

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

总分

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

差异规格评论

差异

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

需要考虑的原因
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

报告一个错误

更快的读取速度，GB/s

3 13.2

测试中的平均数值

Samsung M471A5644EB0-CPB 2GB

需要考虑的原因
Samsung M471A5644EB0-CPB 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 63

左右 -125% 更低的延时
更快的写入速度，GB/s

9.1 1,447.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M471A5644EB0-CPB 2GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

63 28
读取速度，GB/s

3,231.0 13.2
写入速度，GB/s

1,447.3 9.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

478 1989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT151R7TFR4C-H9 4GB

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G Skill Intl F4-3300C16-4GRRD 4GB

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Kingston 9905403-156.A00LF 2GB

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Kingston 99U5700-010.A00G 8GB

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Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

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Kingston 9965525-018.A00LF 4GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

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