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Samsung M378A5244CB0-CTD 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB

Samsung M378A5244CB0-CTD 4GB vs Essencore Limited IM48GU88N26-GIIHA0 8GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 69
    左右 48% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.7
    测试中的平均数值
Essencore Limited IM48GU88N26-GIIHA0 8GB 需要考虑的原因
Essencore Limited IM48GU88N26-GIIHA0 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 69
  • 读取速度，GB/s
    15.8 left arrow 15.7
  • 写入速度，GB/s
    11.8 left arrow 7.7
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 1831

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB RAM的比较

Micron Technology 8ATF1G64AZ-2G6D1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
Kingston 99U5429-007.A00LF 2GB
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内存RAM
Kingston 99U5469-045.A00LF 4GB
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Crucial Technology BL8G26C16U4B.8FD 8GB
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内存RAM
Kingston 99U5471-056.A00LF 8GB
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内存RAM
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内存RAM
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Kingston HX426C16FB2/8-SP 8GB
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内存RAM
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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
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内存RAM
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SK Hynix HYMP125U64CP8-S6 2GB
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Kingston 9905678-028.A00G 8GB
内存RAM