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ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C14-16GVR 16GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs G Skill Intl F4-3000C14-16GVR 16GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
G Skill Intl F4-3000C14-16GVR 16GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
35
左右 26% 更低的延时
需要考虑的原因
G Skill Intl F4-3000C14-16GVR 16GB
报告一个错误
更快的读取速度,GB/s
16.2
12.6
测试中的平均数值
更快的写入速度,GB/s
12.8
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C14-16GVR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
35
读取速度,GB/s
12.6
16.2
写入速度,GB/s
9.5
12.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2174
3246
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3000C14-16GVR 16GB RAM的比较
Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-4000C15-8GTRS 8GB
AMD R5S38G1601U2S 8GB
Kingston KDK8NX-MIE 16GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Kingston KHX1600C10D3/8G 8GB
Kingston 9905403-198.A00LF 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation W4N2400PS-8G 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9965596-036.B00G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
Kingston 99U5428-063.A00LF 8GB
Samsung M378A2K43BB1-CPB 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 4ATF51264HZ-2G6E3 4GB
Qimonda 72T256420HFD3SA 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8
Micron Technology 18HTF12872AY-800F1 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
报告一个错误
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Bug description
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