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Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation W4N2400PS-8G 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Panram International Corporation W4N2400PS-8G 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 12.9
    测试中的平均数值
Panram International Corporation W4N2400PS-8G 8GB 需要考虑的原因
Panram International Corporation W4N2400PS-8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 60
    左右 -161% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation W4N2400PS-8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 23
  • 读取速度，GB/s
    4,595.2 left arrow 16.6
  • 写入速度，GB/s
    2,168.2 left arrow 12.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2825

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Panram International Corporation W4N2400PS-8G 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Micron Technology 36ASF4G72PZ-2G3B1 32GB
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SK Hynix HMT325S6BFR8C-H9 2GB
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SK Hynix HMT31GR7BFR4A-H9 8GB
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SK Hynix HMT351S6CFR8C-PB 4GB
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内存RAM
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Peak Electronics 256X64M-67E 2GB
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Samsung M471A1K43EB1-CWE 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation W4N2400PS-8G 8GB
Panram International Corporation W4N2400PS-8G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Ramaxel Technology RMSA3320KE78HAF-3200 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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Kingston 9905712-016.A00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
内存RAM
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Kingston 9965596-029.B00G 4GB
内存RAM
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SK Hynix HYMP512S64CP8-Y5 1GB
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G Skill Intl F4-3200C16-8GIS 8GB
内存RAM
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Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Samsung M471A5143SB1-CRC 4GB
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