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Strontium EVMT8G1600U86S 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Strontium EVMT8G1600U86S 8GB vs Crucial Technology BLS8G4D240FSA.16FAD 8GB

总分
star star star star star
Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

总分
star star star star star
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

差异 规格 评论

差异

Strontium EVMT8G1600U86S 8GB 需要考虑的原因
Strontium EVMT8G1600U86S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 36
    左右 14% 更低的延时
Crucial Technology BLS8G4D240FSA.16FAD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.6 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Strontium EVMT8G1600U86S 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 36
  • 读取速度，GB/s
    11.7 left arrow 13.6
  • 写入速度，GB/s
    7.2 left arrow 10.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1990 left arrow 2690

Strontium EVMT8G1600U86S 8GB RAM的比较

Strontium EVMT8G1333U86S 8GB
Corsair CMW16GX4M2Z3200C16 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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