Strontium EVMT8G1600U86S 8GB vs Micron Technology 4ATF51264HZ-2G3E2 4GB

总分

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

总分

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

差异规格评论

差异

Strontium EVMT8G1600U86S 8GB

需要考虑的原因
Strontium EVMT8G1600U86S 8GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3E2 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E2 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 -7% 更低的延时
更快的读取速度，GB/s

15.8 11.7

测试中的平均数值
更快的写入速度，GB/s

12.2 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Strontium EVMT8G1600U86S 8GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 29
读取速度，GB/s

11.7 15.8
写入速度，GB/s

7.2 12.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1990 2865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation HU564404EP0200 4GB

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AMD AE34G1601U1 4GB

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G Skill Intl F4-3000C16-16GSXWB 16GB

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Avant Technology J642GU42J7240N2 16GB

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Apacer Technology 78.01G86.9H50C 1GB

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A-DATA Technology AO1P24HC8T1-BPGS 8GB

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Samsung 1600 CL10 Series 8GB

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V-Color Technology Inc. TA48G30S815G 8GB

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Kingston 99U5403-159.A01LF 8GB

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Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Samsung M393B1K70QB0-CK0 8GB

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Essencore Limited IM48GU48A32-GIISMZ 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK64GX4M4C3333C16 16GB

Corsair CMK64GX4M4C3333C16 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB