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Strontium SRT8G86U1-P9H 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
比较
Strontium SRT8G86U1-P9H 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
总分
Strontium SRT8G86U1-P9H 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Strontium SRT8G86U1-P9H 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 -4% 更低的延时
更快的读取速度,GB/s
16.8
12.1
测试中的平均数值
更快的写入速度,GB/s
13.5
7.5
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Strontium SRT8G86U1-P9H 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
26
读取速度,GB/s
12.1
16.8
写入速度,GB/s
7.5
13.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2097
2880
Strontium SRT8G86U1-P9H 8GB RAM的比较
Corsair CMZ16GX3M2A1600C9 8GB
Kingston KTP9W1-MID 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905402-665.A00LF 4GB
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G Skill Intl F3-1600C11-4GIS 4GB
Corsair CMK32GX4M4K4266C19 8GB
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SpecTek Incorporated ?????????????????? 2GB
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V-Color Technology Inc. TC416G24D817 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2666C18-8GTZR 8GB
Corsair CML8GX3M2A1600C9 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3000C15-4GRK 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS16G4D240FSE.16FD 16GB
报告一个错误
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Bug description
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