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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2800C15-16GVR 16GB

takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-2800C15-16GVR 16GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 16.4
    测试中的平均数值
G Skill Intl F4-2800C15-16GVR 16GB 需要考虑的原因
G Skill Intl F4-2800C15-16GVR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 46
    左右 -53% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2800C15-16GVR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 30
  • 读取速度，GB/s
    5,535.6 left arrow 16.4
  • 写入速度，GB/s
    1,852.4 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3148

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

G Skill Intl F4-2800C15-16GVR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
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内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2800C15-16GVR 16GB
G Skill Intl F4-2800C15-16GVR 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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G Skill Intl F4-4266C17-16GVKB 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
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Samsung M386A4G40DM1-CRC 32GB
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Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMK16GX4M2L3000C15 8GB
Corsair CMK16GX4M2L3000C15 8GB
内存RAM
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Kingston 99U5584-005.A00LF 4GB
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内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Corsair CMW16GX4M2D3600C16 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM