takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-4000C18-32GTZR 32GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 18.1

测试中的平均数值

G Skill Intl F4-4000C18-32GTZR 32GB

需要考虑的原因
G Skill Intl F4-4000C18-32GTZR 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更快的写入速度，GB/s

14.7 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-4000C18-32GTZR 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

5,535.6 18.1
写入速度，GB/s

1,852.4 14.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 3596

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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G Skill Intl F4-4000C18-32GTZR 32GB

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Samsung 1600 CL10 Series 8GB

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Avant Technology W642GU42J7240N8 16GB

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Crucial Technology CT8G4SFS8213.M8FA 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

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G Skill Intl F4-2400C15-8GVB 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

G Skill Intl F4-2400C15-8GRK 8GB

G Skill Intl F4-2400C15-8GRK 8GB